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Photocarrier kinetics in IrBr 6 3− ‐doped AgBr
Author(s) -
Spoonhower J. P.,
Deri R. J.
Publication year - 1986
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221330135
Subject(s) - iridium , doping , kinetics , materials science , photoconductivity , x ray photoelectron spectroscopy , chemistry , optoelectronics , physics , catalysis , nuclear magnetic resonance , biochemistry , quantum mechanics
The kinetics of photogenerated carriers in AgBr crystals doped with trivalent iridium are investigated by photoconductivity measurements. The temperature dependence of the photoelectron lifetime is highly dependent on the level of iridium doping. Experiments show that photoelectron‐iridium reaction cross‐sections have a weak dependence on the number of vacancies bound to the iridium site. Estimates of the cross sections for electron capture a t IrBr 6 3−centers with one and two associated vacancies are deduced.