Premium
Screening of the electron–phonon interaction in GaAs heterostructures
Author(s) -
Xiaoguang Wu,
Peetees F. M.,
Devreese J. T.
Publication year - 1986
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221330127
Subject(s) - polaron , condensed matter physics , effective mass (spring–mass system) , renormalization , electron , phonon , physics , random phase approximation , fermi gas , heterojunction , perturbation theory (quantum mechanics) , ground state , thomas–fermi model , fermi energy , quantum mechanics
The effect of the screening of the electron‐phonon interaction on the polaron binding energy ( E ) and the polaron mass ( m * ) is investigated within second order perturbation theory and for different approximations to the two‐dimensional electron gas response (random‐phase approximation, Hartree‐Fock and Thomas‐Fermi approximation). For the electron–phonon contribution to the polaron ground state energy a dynamical screening is applied which takes into account the dielectric response at all frequencies. The influence of the finite width of the electron layer on E and m * is investigated. The results are applied to GaAsAl x Ga 1– x As heterostructures and it is found that the mass renormalization for n e = 10 11 cm −2 is 0.4% which is a factor of eight smaller than the effective mass of the unscreened ideal 2D polaron.