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The structural disorder model: Pressure induced transitions in the semiconductors Si and Ge
Author(s) -
Dixit P. K.,
Vaid B. A.,
Sharma K. C.
Publication year - 1986
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221330108
Subject(s) - semiconductor , materials science , condensed matter physics , order (exchange) , first order , statistical physics , thermodynamics , physics , mathematics , optoelectronics , finance , economics
The structural disorder model, recently proposed by the authors to explain the thermodynamic properties near the transitions of first order, is generalized to include the pressure induced transition in the semiconductors Ge and Si. The calculated values show at least a in order of magnitude agreement with the experimental data.