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Dynamic Conductivity Singularities of a Many‐Valley Semiconductor in a Quantizing Magnetic Field
Author(s) -
Magarill L. I.,
Savvinykh S. K.
Publication year - 1985
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221320224
Subject(s) - condensed matter physics , scattering , impurity , magnetic field , semiconductor , electron , physics , field (mathematics) , absorption (acoustics) , resonance (particle physics) , atomic physics , quantum mechanics , optics , mathematics , pure mathematics
The absorption of linear‐polarized electromagnetic waves in many‐valley n‐Ge type semiconductors in a quantizing magnetic field is considered. A low‐temperature region where the main scattering mechanism is the elastic collision of electrons on point defects is studied. Short‐range impurity centres (“isoelectronic ecntres”) are considered within a zero‐range potential model. The theory is developed for the case of low impurity concentration, and the absorption is expressed in terms of an one‐centre scattering operator. The parameters of the problem are intervalley and intravalley scattering lengths. Main attention is paid to the study of the frequency dependence of the absorption coefficient near resonance peaks due to transitions between Landau levels of different valleys and also due to those from localized impurity states to continuous spectrum. Formulae are derived to describe the shape of resonance peaks and their field and orientation dependences.