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Hall Factor in p‐Ge with Anisotropic Energy Spectrum
Author(s) -
Gutsul I. V.,
Kirnas I. G.,
Litovchenko P. G.,
Marusyak V. I.,
Nitsovich V. M.,
Ostapov S. E.,
Petrosyan E. E.
Publication year - 1985
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221320127
Subject(s) - anisotropy , hall effect , condensed matter physics , magnetic field , impurity , boltzmann equation , physics , kinetic energy , charge carrier , atomic physics , scattering , optics , thermodynamics , quantum mechanics
By solving the kinetic Boltzmann equation, a quasi‐momentum distribution function for charge carriers in p‐Ge is found taking into account the non‐sphericity of the constant energy surfaces of light and heavy hole bands. Account is also taken of the anisotropic carrier scattering by ionized impurities and acoustic lattice vibrations. The magnetic field and temperature dependences of the Hall‐factor r H are calculated for fields 0 < B ≦ 5 T and temperatures 77 K ≦ T ≦ = 260 K. The results calculated are compared with measured τ H values obtained on oriented p‐Ge samples with free carrier concentration p ≈ 1.7 × 10 14 cm −3 .