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Influence of Local Environment on Bound Excitons and Bound Excitonic Molecules in III‐V Alloys. I. Theory and Numerical Results for GaAs 1− x P x :N
Author(s) -
Müller H.J.
Publication year - 1985
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221320124
Subject(s) - exciton , alloy , electron , perturbation theory (quantum mechanics) , upper and lower bounds , molecule , crystal (programming language) , condensed matter physics , physics , distribution (mathematics) , atomic physics , molecular physics , chemistry , quantum mechanics , mathematics , mathematical analysis , computer science , programming language , organic chemistry
A calculation of the local‐environment effect on nitrogen bound excitons and excitonic molecules in III‐V‐mixed crystal alloys is represented. The stochastic alloy potential is treated by means of perturbation theory, and a random distribution of As and P atoms in the appropriate sublattice is assumed. Because of special considerations concerning the concentration dependence of the averaged alloy potential the method is free of adjustable parameters. The density of states and its statistical momenta are calculated including electrons and holes simultaneously. The method is applied to GaAs 1−x P x :N. Good agreement with measured bandwidths for bound excitons is obtained.