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The Electronic Configuration of 121 Sb in Semiconductors
Author(s) -
Weyer G.,
Andreasen H.,
De Waard H.
Publication year - 1985
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221320122
Subject(s) - impurity , semiconductor , isotope , chemistry , acceptor , atomic physics , relaxation (psychology) , compound semiconductor , electron configuration , antimony , crystallography , materials science , ion , condensed matter physics , nuclear physics , inorganic chemistry , physics , optoelectronics , social psychology , epitaxy , organic chemistry , layer (electronics) , psychology
Isomer shifts of the 37 ke V Mössbauer transition in 121 Sb are determined for 121 Sb constituents and impurities in III‐V and II‐VI compound semiconductors. Radioactive 121 Xe isotopes decaying to 121 Te, the 121 Sb‐parent isotope, were implanted at the ISOLDE facility at CERN. The nature of the electronic configuration of Sb‐isoelectronic and Sb‐donor and ‐acceptor impurities in semiconductors is discussed in terms of bond hybridization and ionicity. The influence of structural relaxation is pointed out.