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Auger Recombination of Electrons via Deep and Shallow Acceptors
Author(s) -
Khalfin V. B.,
Strikha M. V.,
Yassievich I. N.
Publication year - 1985
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221320121
Subject(s) - auger effect , scattering , acceptor , wave function , auger , recombination , semiconductor , radius , electron , atomic physics , range (aeronautics) , free electron model , chemistry , physics , molecular physics , materials science , condensed matter physics , optics , quantum mechanics , biochemistry , computer security , computer science , composite material , gene
The theory of Auger recombination via deep and shallow acceptors in p‐type A III B V semiconductors is investigated to determine the influence of free and localized carrier wave functions orthogonality. The extension of zero radius potential model to the case of several bands is used for the treatment of the deep acceptor wave function. The asymptotic wave function of the shallow acceptor for the range of the great wave vectors, and the scattering amplitude in the case of elastic scattering of the free carriers by a deep centre, are obtained, taking into account complex band structure. The results of the theory are applied to GaAs, and InGaAsP solid solutions. The rates of the various processes of Auger recombination are compared.