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A Localized Orbital Description of Ge‐Si Alloy
Author(s) -
Erbarut E.,
Tomak M.
Publication year - 1985
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221320118
Subject(s) - atomic orbital , alloy , conduction band , valence band , symmetry (geometry) , valence (chemistry) , condensed matter physics , gaussian , electronic band structure , thermal conduction , electronic structure , materials science , physics , molecular physics , quantum mechanics , mathematics , band gap , geometry , metallurgy , electron
The simplest Gaussian orbitals of S and P symmetry are employed for the study of electronic band structure of Ge‐Si alloy. A reasonably good description of the valence and conduction band is obtained.