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Hot‐Exciton Orientation in Indirect‐Gap GaAs 1−x P x Alloys
Author(s) -
Charfi F. F.,
Zouaghi M.
Publication year - 1985
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221320110
Subject(s) - exciton , scattering , phonon , polarization (electrochemistry) , condensed matter physics , raman scattering , cascade , intensity (physics) , phonon scattering , band gap , atomic physics , materials science , physics , raman spectroscopy , optics , chemistry , chromatography
Resonant Raman scattering in indirect‐gap GaAs 1‐x P x alloys is studied. The multiphonon scattering intensity as a function of the incident energy and polarization correlation measurements of 2LO‐phonon scattering are presented. The intensity dependence and the depolarization associated to the participation of large momentum resonant intermediate states are consistent with the hot exciton cascade model.