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Bound Phonons
Author(s) -
Balkanski M.,
Jouanne M.,
Kanehisa M.
Publication year - 1985
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221320105
Subject(s) - phonon , condensed matter physics , excitation , bound state , degenerate energy levels , coupling (piping) , atomic physics , electron , physics , valence (chemistry) , electronic structure , materials science , quantum mechanics , metallurgy
The strong electron‐phonon coupling, occurring when the energy of the electronic excitation is comparable to that of the LO mode, is treated in two cases: (i) the electronic state is a localized impurity level and (ii) the electronic excitation is an interband transition continuum between valence or conduction bands in degenerate n‐ and p‐type silicon. In the first case the mixed bound electron‐phonon state has as many bound‐phonon levels as electronic excitation energies, deduced from detailed band structure, coming in close coincidence with the LO‐phonon energy. In the second case the electron‐phonon coupling results in frequency shifts and phonon line deformations due to phonon binding to the electronic states.