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Measurements of Proton Channeling Energy Losses in Silicon in the Intermediate Energy Region
Author(s) -
Gehrmann P.,
Lenkeit K.,
Stolle R.
Publication year - 1985
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221310213
Subject(s) - stopping power , extrapolation , energy (signal processing) , atomic physics , silicon , proton , power (physics) , materials science , planar , physics , enhanced data rates for gsm evolution , nuclear physics , computational physics , ion , mathematics , mathematical analysis , telecommunications , computer graphics (images) , quantum mechanics , computer science , metallurgy
The energy loss of protons in the energy region from 40 to 350 keV is measured for (110), (100), and (111) planar channeling, for 〈110〉, 〈111〉, 〈112〉 axial channeling, and for random directions in silicon. The investigations are carried out by means of the transmission experiment using silicon targets of several thicknesses. Stopping power values are derived from the peak and the leading edge of energy spectra for channeled particles. Special procedures are applied to correct the obtained stopping power data with respect to the target thickness. In the case of leading edge the stopping power data depend strongly on the target thickness. It is shown that only the extrapolation to zero thickness leads to correct stopping power values for best channeled particles. It is found that the ratio of channeled to random stopping power shows a maximum in the energy region at about 70 keV. Here the stopping power for channeling and random directions reach their largest value, too.