Premium
Stimulated Raman Scattering and Raman Instability of an Intense Helicon Wave in Longitudinally Magnetized n‐Type Piezoelectric Semiconducting Plasma
Author(s) -
Ghosh S.,
Dixit S.
Publication year - 1985
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221310127
Subject(s) - helicon , dispersion relation , raman scattering , physics , instability , amplitude , crystal (programming language) , atomic physics , transverse wave , semiconductor , optics , condensed matter physics , raman spectroscopy , plasma , wave propagation , optoelectronics , mechanics , quantum mechanics , computer science , programming language
Abstract A detailed analytical investigation is made of the Raman instability of the Stokes component of the scattered helicon wave in longitudinally magnetized n‐type nondegenerate cubic piezoelectric semiconductor crystal belonging to the class 4 3m. The general dispersion relation is obtained by using coupled mode theory and considering that the scattering is due to both the molecular vibrations produced due to the pump wave at a frequency equal to that of the transverse optical phonons and the electron plasma wave. The dispersion relation is solved for both the cases of scattered helicon waves (i.e. in the cases of left‐hand and right‐hand circularly polarized waves). The threshold value of the pump amplitude necessary for the onset of instability and the growth rate well above the threshold are obtained analytically for both the modes. The analysis is applied to a specific semiconductor, n‐InSb at 77 K duly irradiated by a high‐power helicon wave for numerical estimations. The laser wave intensities used are in the range of 10 9 to 10 12 Wm −2 which is assumed to be less than the damage threshold of the InSb crystal. The order of wave amplitude is feasible presently.