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Electron Screening and Mobility in Heavily Doped Silicon
Author(s) -
Sy H. K.,
Desai D. K.,
Ong C. K.
Publication year - 1985
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221300244
Subject(s) - electron , doping , dopant , silicon , electron mobility , thermal conduction , condensed matter physics , materials science , valence (chemistry) , effective mass (spring–mass system) , atomic physics , physics , optoelectronics , quantum mechanics , composite material
Abstract The screening effect is studied in a heavily doped n‐type silicon. The Lindhard susceptibility is used for the conduction electrons. The valence susceptibility is treated as a constant parameter. The mobility of electrons is calculated using the Born approximation and by considering the dependence of the electron effective mass on dopant concentration determined empirically. The results compare favourably with recent experiments.