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Photoionization Cross‐Section for δ‐Shell Deep Levels
Author(s) -
Masut R.,
Penchina C. M.
Publication year - 1985
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221300237
Subject(s) - photoionization , ionization , atomic physics , impurity , ionization energy , electron , spectral line , effective nuclear charge , semiconductor , valence electron , chemistry , physics , ion , optoelectronics , quantum mechanics
A δ‐shell model is presented of deep impurities in semiconductors as a simple but effective extension of the well‐known δ‐function model of Lucovsky, in order to address the problem of fairly sharp photo‐ionization spectra. Whereas Lucovsky treated only the photo‐ionization of electrons from s‐like impurity states to the conduction band (forbidden transitions), this paper considers also the photo‐ionization of holes to the valence band (allowed transitions). The new δ‐shell model gives an improved fit to experimental photo‐ionization data. It can be used to determine the range of the deep impurity potential as well as the binding energy, and can help to determine the nature of the photoionized charge (electron/hole).