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Gap Shift in Doped Semiconductors at Finite Temperatures
Author(s) -
Thuselt F.,
Rösler M.
Publication year - 1985
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221300230
Subject(s) - semiconductor , doping , condensed matter physics , random phase approximation , impurity , materials science , shrinkage , wavelength , band gap , physics , optoelectronics , quantum mechanics , composite material
The interaction part to the chemical potential in doped semiconductors which is well‐suited to describe the gap shrinkage is calculated in the random‐phase approximation (RPA). The numerical results are compared with several approximate formulas to be approached within certain ranges in the density‐temperature plane. The numerical calculations are performed for n‐doped Si and GaAs being representatives of typical indirect and direct materials. Both behave completely different: in the former the gap shift is nearly independent of temperature due to the dominance of short‐wavelength screening, where in direct semiconductors the long‐wavelength screening leads to a strongly temperature‐dependent gap shift. The fraction of the impurity contribution to the total gap shrinkage behaves different in both types of materials, too.