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The Energy of Shallow Donor States in CdTe, GaAs, AgCl, AgBr Semiconductors
Author(s) -
Grinberg M.,
Łęgowski S.,
Męczyńska H.
Publication year - 1985
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221300133
Subject(s) - polaron , shallow donor , semiconductor , hamiltonian (control theory) , excited state , dielectric , condensed matter physics , electron , wave function , cadmium telluride photovoltaics , dielectric function , phonon , physics , atomic physics , quantum mechanics , optoelectronics , mathematics , mathematical optimization
The model given by Bajaj of the energy levels of shallow point defects is modified introducing wave‐vector dependent dielectric functions. In the coupled polaron Hamiltonian the electron–ion interaction is described by the potential screened by the dielectric function. The electron–phonon interaction depends on the dielectric function too. The obtained energies of the ground and first excited states reproduce quite well the experimental data.