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On the Microscopic Theory of the Resonant Nonlinear Refractive Index of InSb
Author(s) -
Dat Nguyen Nhu,
Van Hieu Nguyen
Publication year - 1985
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221300123
Subject(s) - refractive index , microscopic theory , physics , semiconductor , condensed matter physics , nonlinear system , electron , free carrier , plasma , optics , quantum mechanics
A new version is presented for the microscopic theory of the resonant intensity dependence of the refractive index of a narrow gap zincblende semiconductor InSb. A general formula is derived to include the contributions from both the mechanisms: the free charge carrier plasma and the dynamical Burstein‐Moss effect. The electron and hole distribution functions are determined by means of the transport equation.