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Monte Carlo Simulation of the Production of Charge Carriers in NaCl Crystals by XUV Irradiation
Author(s) -
Kikas A.,
Elango M.
Publication year - 1985
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221300120
Subject(s) - monte carlo method , photon , electron , atomic physics , physics , band gap , pair production , absorption (acoustics) , photon energy , scattering , monte carlo method for photon transport , irradiation , charge carrier , computational physics , inelastic scattering , energy (signal processing) , optics , dynamic monte carlo method , condensed matter physics , nuclear physics , quantum mechanics , statistics , mathematics , direct simulation monte carlo
A Monte Carlo simulation of the number as well as energy and spatial distribution of the electron‐hole pairs created in NaCl crystals by irradiation with photons of 20 to 250 eV is carried out by using a simplified band scheme and the random‐ k approximation. It is shown that the low‐energy parts of the carrier bands are populated preferentially. The computed mean pair‐creation energy is in reasonable agreement with the experimental value (13.4 to 16.7 eV) if the inelastic electron‐electron scattering threshold energy is chosen in the interval 1.2 to 1.5 E g ( E g is the band‐gap energy). The mean distance of the electron‐hole pair creation events from the photon absorption site is 50 to 60 Å.