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Cadmium Concentration Dependence of Mobility in Cadmium‐Doped Lead Telluride
Author(s) -
RustomDalouche R.,
Rolland S.,
Granger R.,
Pelletier C. M.
Publication year - 1985
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221290245
Subject(s) - cadmium , cadmium telluride photovoltaics , doping , impurity , phonon , materials science , mercury cadmium telluride , electron mobility , chemistry , analytical chemistry (journal) , optoelectronics , metallurgy , condensed matter physics , environmental chemistry , optics , physics , infrared , organic chemistry
Lead telluride doped with cadmium is grown in a two temperature furnace. The cadmium content is controlled through cadmium vapor pressure. Electronic concentration and Hall mobility are measured for cadmium concentrations up to 1.65 × 10 21 cm −3 at 77 and 300 K. Mobility variations are fairly explained by a model taking into account dispersion on acoustic and optical phonons, and neutral impurities.