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Charge Carrier Mobility Caused by Scattering from Hybrid Plasmon–Phonon Modes
Author(s) -
Kasiyan A. I.,
Russu P. I.
Publication year - 1985
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221290146
Subject(s) - plasmon , degenerate semiconductor , phonon , degenerate energy levels , condensed matter physics , charge carrier , scattering , electron , phonon scattering , semiconductor , electron mobility , materials science , physics , optoelectronics , optics , quantum mechanics
A polar semiconductor containing one‐component electron plasma of free charge carriers is studied. The carrier density is assumed to vary over a wide range from a non‐degenerate state to a high degenerate plasma state. The interaction between the L O phonons and charge carrier plasma modes leads to hybrid plasmon‐phonon branches in the spectrum. The spectrum of renormalized plasmon‐phonon modes is calculated for PbTe and GaAs crystals. The electron mobility as a function of carrier density is investigated considering electron scattering by renormalized plasmon‐phonon modes both, in non‐degenerate and degenerate specimens of these crystals.