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Electron–LO‐Phonon Interaction near Interfaces. Application to Scattering of Inversion Layer Electrons on SiO 2 Si Interfaces
Author(s) -
Bechstedt F.,
Enderlein R.
Publication year - 1985
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221290135
Subject(s) - electron , scattering , condensed matter physics , phonon , phonon scattering , coulomb , electron scattering , physics , electron mobility , mott scattering , atomic physics , quantum mechanics , neutron scattering , small angle neutron scattering
A theory for the electron‐LO‐phonon interaction near semiconductor interfaces is developed. Starting point is the electron self‐energy in the linearly shielded potential approximation which allows to include the interface influence simply by calculating the corresponding screened Coulomb potential. Carrier scattering, screening, and interaction of electrons with longitudinal elementary excitations are treated from a unified point of view. The theory is applied to the scattering of inversion layer electrons in a MOSFET from polar SiO 2 Si interface phonons. These longitudinal phonons of Fuchs‐Kliewer type are not present in bulk Si. Their polar character is solely due to the polar nature of SiO 2 . The scattering rate and the zero‐field mobility limited by electron‐interface‐LO‐phonon interaction are calculated and compared with experimental data. It is shown that for high electron concentrations in the inversion channel the new scattering process is a serious rival of other mechanisms.