Premium
Effects of Strains on the Dynamic Effective Charge of III–V Semiconductors
Author(s) -
Anastassakis E.,
Cardona M.
Publication year - 1985
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221290110
Subject(s) - semiconductor , anisotropy , charge (physics) , lattice (music) , materials science , condensed matter physics , stress (linguistics) , charge carrier , deformation (meteorology) , physics , optoelectronics , composite material , quantum mechanics , linguistics , philosophy , acoustics
A calculation is made of the anisotropy induced by an external stress on the dynamic effective charge of zincblende‐type semiconductors. This derivation is based on the semiempirical bondorbital model for the effective charge, and on the stress‐induced changes of the latter due to bond deformation and internal lattice displacements. Numerical application to specific materials shows that the effect can be significant. The results are in reasonable agreement with existing experimental information.