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Study of the Hall Coefficient in p‐Type Germanium Taking into Account Anisotropic Charge Carrier Scattering
Author(s) -
Gutsul I. V.,
Kirnas I. G.,
Litovchenko P. G.,
Marusyak V. I.,
Nitsovich V. M.,
Ostapov S. E.,
Petrosyan E. E.
Publication year - 1985
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221280243
Subject(s) - hall effect , anisotropy , scattering , germanium , condensed matter physics , physics , kinetic energy , charge carrier , valence band , magnetic field , atomic physics , band gap , optics , silicon , quantum mechanics , optoelectronics
A quasi‐momentum distribution function of light and heavy holes in p‐type Ge is found by expanding the field and the collision terms of the kinetic equation in terms of the anisotropy parameter, indicating the degree of non‐sphericity of constant energy surfaces, in the zeroth, first, and second order approximation. The above method for solving the kinetic equation enables one to calculate the magnetic field dependence of the Hall coefficient taking into account the complex structure of the valence band of p‐Ge and the nature of carrier scattering. The calculated R H / R 0 = f ( B ) dependence is compared with the experimental values obtained on samples with p = 1.7 × 10 14 cm −3 having an orientation E ∥ 〈100〉, B ∥ 〈001〉 for T = 77 and 300 K.