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Far Infrared Absorption by Hot Holes in p‐Ge under E ⟂ B Fields
Author(s) -
Pozhela Yu. K.,
Starikov E. V.,
Shiktorov P. N.
Publication year - 1985
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221280231
Subject(s) - far infrared , infrared , impurity , absorption (acoustics) , phonon , population inversion , atomic physics , ion , physics , wavelength , radiation , electric field , condensed matter physics , population , materials science , molecular physics , optics , laser , demography , quantum mechanics , sociology
A quantum mechanical approach and simulation of the hole energy distribution by Monte Carlo technique are used to calculate the field and wavelength dependences of the absorption crosssections of far infrared (λ = (40 to 500) μm) radiation by free holes interacting with phonons and impurity ions (σ p ) and due to the hole direct optical transitions between the light‐ and heavy‐hole subbands (σ 12 ) for p‐type Ge in crossed electric and magnetic fields. The IR absorption by light‐and heavy‐holes emitting optical phonons is shown to increase sharply with E and dominate under strong heating. The absorption by holes interacting with impurity ions is shown to decrease significantly as the hole heating increases. This contribution can become negative. Under the population inversion of isomomentum states the amplification of the far IR radiation is shown possible only in the wavelength range λ = (40 to 200) μm. The necessary conditions are considered.