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Zero Energy Gap Conditions and Band Inversion in Superlattices
Author(s) -
de Dios Leyva M.,
Gondar J. López
Publication year - 1985
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221280223
Subject(s) - superlattice , condensed matter physics , band gap , quasi fermi level , semimetal , direct and indirect band gaps , conduction band , electron , discontinuity (linguistics) , dispersion relation , electronic band structure , materials science , physics , quantum mechanics , mathematics , mathematical analysis
Using the envelope‐function approximation and the transfer‐matrix method, for k ⟂ = 0 , the wave functions, the dispersion relation, and the zero energy gap conditions connected with light particles (electrons and light holes) in GaAs‐Al x Ga 1− x As and InAs‐GaSb superlattice are obtained. One of the obtained zero energy gap conditions is a direct consequence of the spatial dependence of the energy gap. Also studied, in detail, are the properties of those states for which the lowest conduction band and the highest valence band touch each other. It is established that with increasing magnitude of the conduction band‐valence band edge discontinuity, or of layer thickness, the band inversion phenomenon occurs. Finally, some numerical results for the InAs‐GaSb superlattice are reported.