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Excitons in Periodic Structures with Homopolar Semiconductors and Anisotropic Dielectrics
Author(s) -
Fomin V. M.,
Pokatilov E. P.
Publication year - 1985
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221280130
Subject(s) - exciton , anisotropy , condensed matter physics , dielectric , semiconductor , physics , coulomb , materials science , optics , quantum mechanics , electron
The charge carrier interaction potential is determined and the exciton energy spectrum in periodic multi‐layer structures with anisotropic permeability constant is calculated. In contrast to three‐layer systems with semi‐bounded outer layers in periodic structures dielectric layers are found to affects the exciton spectrum not only by the mean geometric value of the dielectric permeability tensor component \documentclass{article}\pagestyle{empty}\begin{document}$ \bar \varepsilon _a = \sqrt {\varepsilon _a^\parallel \varepsilon _a^ \bot } $\end{document} but also by the anisotropy parameter ε a = ε a ⟂ /ε a ∥ . The absolute value of the exciton ground‐state energy in semiconductors with a dielectric constant ε b > ε a and low layer thickness l a and l b in the two‐dimensional Coulomb interaction region is found to decrease as the thicknesses ratio λ = l a / l b decreases. The effect of semiconductor layers thickness at different values of the anisotropy parameter ε a as well as of thickness ratio λin the logarithmic law of interaction on the exciton ground‐state energy is studied.