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The Effect of Collective Electron‐Hole Plasma Modes on Charge Carrier Mobility in Polar Semiconductors
Author(s) -
Kasiyan A. I.,
Russu P. I.
Publication year - 1985
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221280129
Subject(s) - charge carrier , condensed matter physics , electron mobility , phonon , electron , semiconductor , dispersion relation , polar , plasmon , dispersion (optics) , range (aeronautics) , scattering , plasma , effective nuclear charge , materials science , physics , optics , optoelectronics , astronomy , composite material , quantum mechanics
Abstract The dispersion relations for renormalized plasmon‐phonon modes for PbTe and GaAs are calculated. Electron μ e and hole μ h mobilities are computed for scattering by these modes. It is found that with the increase of the charge carrier concentration, n , mobilities decrease due to the effect of dynamic antiscreening. In the concentration range where the free‐carrier plasma frequency is comparable to the uncoupled LO‐phonon frequency the mobilities reach minimum values. With further increase of n the antiscreening effect decreases and the mobilities begin to grow tending in the limit of high n to values corresponding to the quasistatic screening.