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Structural Disorder Model of Amorphous Semiconductors Thermodynamics of a‐As
Author(s) -
Vaid B. A.,
Sharma K. C.
Publication year - 1985
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221280111
Subject(s) - amorphous semiconductors , amorphous solid , enthalpy , thermodynamics , semiconductor , materials science , entropy (arrow of time) , statistical physics , configuration entropy , condensed matter physics , physics , chemistry , crystallography , optoelectronics
The structural disorder model of amorphous semiconductors, near the amorphous to crystalline transition, recently proposed, is generalized for triply coordinated As. The model is able to explain at least qualitatively the change in enthalpy and the configurational entropy during transition.