Overshoot in Low‐Conduction Semiconductors | Zendy

Gerlach E. | Zendy

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Overshoot in Low‐Conduction Semiconductors

Author(s) -

Gerlach E.

Publication year - 1985

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.2221270235

Subject(s) - overshoot (microwave communication) , semiconductor , scattering , thermal conduction , electron , electric field , condensed matter physics , pulse (music) , field (mathematics) , materials science , physics , atomic physics , optics , optoelectronics , electrical engineering , quantum mechanics , mathematics , engineering , detector , pure mathematics

It is shown that semiconductors, for particular scattering mechanisms, may have a strong peak in the conductivity s̀′(ω), if the ratio of the dc‐scattering frequency and the plasma resonance frequency is larger than one. This peak immediately leads to a velocity overshoot for cold electrons, when applying an electric field pulse.

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