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Transition Region Effect in the SiO 2 –SiO x –Si System on the Si Two‐Dimensional Electron Gas
Author(s) -
Ye QiuYi,
Wang ZhiChekg
Publication year - 1985
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221270225
Subject(s) - fermi gas , electron , energy (signal processing) , space (punctuation) , condensed matter physics , silicon , materials science , transition metal , atomic physics , physics , chemistry , quantum mechanics , philosophy , linguistics , biochemistry , catalysis , metallurgy
The energy levels of the Si two‐dimensional electron gas (2 DEG) subband is theoretically investigated, considering a graded composition in a transition region of the SiO 2 –SiO x –Si system. An expression is found of an effective atomic potential of the transition, varying continually along the space coordinate, and variational calculations are performed with trial wave functions to obtain the subband energy of the 2 DEG. The theoretical results coincide satisfactorily with some known FIR experimental results about Si‐2DEG. It is shown that the properties of the Si‐2DEG are quite sensitive to the transition and, further, that if the transition width is above a certain critical value, there is no 2DEG in the SiO 2 –SiO x –Si system.