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Stimulated Brillouin Scattering of High‐Power Helicon Waves in Longitudinally Magnetized Cubic Piezoelectric Semiconducting Plasmas
Author(s) -
Ghosh S.,
Saxena R. B.
Publication year - 1985
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221270216
Subject(s) - helicon , dispersion relation , brillouin scattering , physics , atomic physics , piezoelectricity , plasma , brillouin zone , scattering , optics , magnetic field , condensed matter physics , excited state , laser , acoustics , quantum mechanics
A detailed analytical investigation is made of the stimulated Brillouin scattering of a high‐power helicon pump wave propagating parallel to the applied magnetic field in an n‐type cubic piezoelectric semiconducting plasma belonging to class 4 3m. A general dispersion relation is obtained by using the hydrodynamic model of a homogeneous, piezoelectric, one‐component (electron) semiconducting plasma, and the threshold value of the pump electric fields and the initial growth rates of both the excited modes (i.e., in the cases of left‐hand and right‐hand circularly polarized modes) well above the threshold are discussed. The analysis is applied to a specific semiconductor, n‐InSb at 77 K, duly irradiated by a high‐power helicon wave for numerical estimations. The laser field intensities used are in the range of 10 7 to 10 11 Wm −2 which is assumed to be less than the damage threshold of the InSb crystal. The order of wave amplitude is experimentally feasible.