Premium
Empirical Tight‐Binding Band Structure of Wurtzite Semiconductors SiC, ZnSe, and ZnTe
Author(s) -
Tuncay Ç.,
Tomak M.
Publication year - 1985
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221270214
Subject(s) - wurtzite crystal structure , tight binding , semiconductor , materials science , electronic band structure , binding energy , electronic structure , wide bandgap semiconductor , condensed matter physics , band gap , semiconductor materials , crystallography , optoelectronics , chemistry , atomic physics , physics , zinc , metallurgy
The electronic energy band structures in an sp 3 tight‐binding model of the wurtzite semiconductors SiC, ZnSe, and ZnTe are reported.