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Small‐Signal AC Response of Two‐Dimensional Hot Electrons in Quantum‐Well Structures of Polar Semiconductors
Author(s) -
Bhattacharya A.,
Ghosal A.,
Chattopadhyay D.
Publication year - 1985
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221270145
Subject(s) - electron , polar , signal (programming language) , physics , semiconductor , drift velocity , scattering , condensed matter physics , field (mathematics) , computational physics , optoelectronics , optics , quantum mechanics , mathematics , computer science , pure mathematics , programming language
Small‐signal ac mobility of hot electrons moving two‐dimensionally in the lowest sub‐band of a quantum‐well structure is studied on a drifted Maxwellian model incorporating polar optic and acoustic scattering. Numerical results are obtained for GaAs considering a dc bias field of 1 kV/cm. The small‐signal ac mobility is found to be constant up to 350 GHz at 77 K and up to 120 GHz at 120 K. The drift velocity, however, begins to lag behind the field from 50 GHz at 77 K and from 10 GHz at 120 K.