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Tunneling from Deep Levels of l–c Type in Electric Fields
Author(s) -
Köster H.,
Kurnosova O. V.,
Yassievich I. N.
Publication year - 1985
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221270134
Subject(s) - quantum tunnelling , quasi fermi level , condensed matter physics , electron , band gap , semiconductor , conduction band , thermal conduction , valence band , semimetal , scanning tunneling spectroscopy , physics , materials science , optoelectronics , quantum mechanics
The tunneling probabilities from deep levels of l–c type to the conduction band (for electrons) and to the valence band (for holes) of semiconductors are derived. In connection with these results an expression is calculated for the valence‐to‐conduction‐band tunneling current via deep levels in the forbidden band. Moreover it is shown that the effective tunneling energy differs from the real defect energy within the gap. This defect energy correction has direct consequences for the analysis of corresponding experimental investigations.