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Photoluminescence and Recombination of Excess Carriers in Amorphous Hydrogenated Silicon
Author(s) -
Andreev A. A.,
Zherzdev A. V.,
Kosarev A. I.,
Kougia K. V.,
Shlimak I. S.
Publication year - 1985
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221270127
Subject(s) - photoluminescence , recombination , photoconductivity , spontaneous emission , amorphous silicon , radiative transfer , materials science , optoelectronics , amorphous solid , silicon , non radiative recombination , carrier lifetime , atomic physics , molecular physics , physics , chemistry , optics , semiconductor materials , crystalline silicon , crystallography , semiconductor , laser , biochemistry , gene
Concomitant simultaneous investigations of both, photoluminescence (PL) and photoconductivity (PC) decay from steady‐state levels are carried out for the first time under the same conditions for the same a‐Si:H samples. It is found that there is no competition between radiative and non‐radiative recombination channels for excess carriers. A general model of tunnel distant‐pair recombination based on the experimental data is proposed for explanation of both, PL and PC.