Premium
The Thermoelectric Power of p‐Ge at Low Temperatures
Author(s) -
Kaden E.,
Günter H.L.
Publication year - 1984
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221260234
Subject(s) - phonon drag , scattering , phonon scattering , condensed matter physics , phonon , seebeck coefficient , thermoelectric effect , materials science , relaxation (psychology) , atmospheric temperature range , thermoelectric materials , electrical resistivity and conductivity , physics , thermodynamics , optics , quantum mechanics , psychology , social psychology
The thermoelectric power of lightly doped p‐Ge is measured in the temperature range of 5 to 300 K for the investigation of phonon scattering. The application of a simple theoretical model requires some knowledge of the dominant carrier scattering processes obtained by measurements of electrical conductivity and Hall effect. In terms of that model, the temperature dependence of the phonon drag part of the thermoelectric power can be attributed to only two phonon scattering processes: phonon‐phonon scattering at higher temperatures and phonon‐boundary scattering at lower temperatures. The constant phonon relaxation time of boundary scattering and its dependence on sample diameter has been observed at temperatures below 10 K.