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Time‐Resolved Reflectivity Measurements on RF Sputtered a‐Si:H Alloy
Author(s) -
Lue Juh Tzeng
Publication year - 1984
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221260231
Subject(s) - photoconductivity , alloy , reflectivity , relaxation (psychology) , materials science , enhanced data rates for gsm evolution , optoelectronics , condensed matter physics , atomic physics , optics , physics , metallurgy , psychology , social psychology , telecommunications , computer science
Photoinduced carrier lifetimes of RF sputtered a‐Si:H alloy are measured by time‐resolved reflectivity and photoconductivity decay methods. Both experiments indicate a lifetime of about 5 μs. A calculation of the relaxation time of photogenerated carriers from extended mobility edge to midgap localized states satisfactorily agrees with this value.