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Tight‐Binding Calculations for the Angle‐Resolved Local Density of States of InP(110) Surfaces
Author(s) -
Jalaj S.,
Singh I.,
Joshi S. K.
Publication year - 1984
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221260226
Subject(s) - angle resolved photoemission spectroscopy , tight binding , density of states , slab , indium phosphide , materials science , electronic structure , binding energy , local density of states , photoemission spectroscopy , x ray photoelectron spectroscopy , condensed matter physics , molecular physics , atomic physics , chemistry , physics , optoelectronics , nuclear magnetic resonance , geophysics , gallium arsenide
Abstract Angle‐resolved electronic local density of states and layer density of states of indium phosphide(110) surfaces are calculated using empirical tight binding methods. The slab method is used for the purpose. The results are compared with recent angle‐resolved photoemission spectroscopy (ARUPS) findings.