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The Role of Electron‐Hole Interaction in the Cooling Process of Highly Excited Carriers
Author(s) -
Asche M.,
Sarbei O. G.
Publication year - 1984
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221260220
Subject(s) - electron , electron cooling , excited state , excitation , atomic physics , exchange interaction , relaxation (psychology) , energy exchange , physics , condensed matter physics , plasma , quantum mechanics , psychology , social psychology , atmospheric sciences , ferromagnetism
When the energy exchange by electron‐hole interaction is properly taken into account, the holes after optical excitation never achieve such a high temperature as the electrons for the concentrations usually envolved, and the cooling rate of the electrons therefore is significantly lower than in the case of an equal plasma temperature assumed until now. Theoretical expressions are obtained in Born approximation using the Thomas‐Fermi model for screening and calculations are performed for carrier relaxation in GaAs after instantaneous excitation.