Premium
The Effect of Many‐Electron Correlation on Photothresholds of Semiconductors and Valence Band Discontinuities at Heterojunctions
Author(s) -
Bechstedt F.,
Enderlein R.,
Heinrich O.
Publication year - 1984
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221260217
Subject(s) - classification of discontinuities , semiconductor , linear combination of atomic orbitals , electron , electronic correlation , condensed matter physics , physics , relaxation (psychology) , heterojunction , atomic physics , quantum mechanics , atomic orbital , mathematics , mathematical analysis , psychology , social psychology
Photothresholds of semiconductors are known to deviate by 3 to 4 eV from the predictions of one‐electron band theory. It is shown that these discrepancies are due to many‐electron correlation effects, in particular, to electronic relaxation. The corrections to photothresholds due to electronic relaxation are calculated by means of Green's function technique applying the linear shielded potential approximation to the exchange‐correlation self‐energy. Within the uncertainties of LCAO theories the calculated photothresholds of group IV, III‐V, and II‐VI semiconductors agree with experimental data. A simple physical picture of the correlation effect is provided. Relaxation corrections to valence band discontinuities from one‐electron band theories are also calculated.