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Angular Distributions of Fast Electrons at Planar Channeling in Silicon Crystals
Author(s) -
Kaplin V. V.,
Nurmagambetov S. B.,
Gridnev V. I.,
Rozum E. I.,
Pak S.,
Uglov S. R.,
Vorobiev S. A.
Publication year - 1984
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221260216
Subject(s) - electron , planar , silicon , atomic physics , realization (probability) , crystal (programming language) , materials science , orientation (vector space) , population , physics , molecular physics , optoelectronics , geometry , nuclear physics , statistics , computer graphics (images) , mathematics , computer science , programming language , demography , sociology
Detailed experimental and theoretical investigations for the orientation dependence of the angular distribution of 5.6 MeV electrons transmitted through a silicon crystal in (110) and (111) planar directions are performed. The realization of atomic‐type and molecular‐type quantum states of channeled electrons as well as the effect of preferential population of the definite states are observed.