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Electronic Structure of V 3 Si and V 3 Ge. Comparison of NMR Data with Band‐Structure Calculations
Author(s) -
Skripov A. V.,
Stepanov A. P.
Publication year - 1984
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221260215
Subject(s) - electronic structure , electronic band structure , fermi level , condensed matter physics , density of states , fermi energy , electron , chemistry , atomic physics , materials science , physics , nuclear physics
The parameters of electronic structure near the Fermi energy obtained from 51 V NMR measurements in V 3 Si and V 3 Ge are compared with the results of band‐structure calculations. It is found that the band‐structure calculations of Klein et al. combined with the model of electron lifetime broadening can satisfactorily describe the experimental temperature dependence of spin‐lattice relaxation rate in V 3 Si and V 3 Ge. For both the compounds the experimental values of the electronic density of states at the Fermi level, N ( E F ), are about twice the theoretical ones. The d‐orbital content of N ( E F ) in V 3 Si derived from the experiment is consistent with the predictions of Mattheiss and Weber.