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Free‐Carrier Optical Absorption Induced by Dislocation Scattering Mechanisms in III‐V Compounds
Author(s) -
Vignaud D.,
Farvacque J. L.
Publication year - 1984
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221260142
Subject(s) - dislocation , scattering , absorption (acoustics) , free carrier , condensed matter physics , free carrier absorption , materials science , piezoelectricity , optics , crystallography , chemistry , optoelectronics , physics , composite material , semiconductor
The influence of dislocations on the free carrier absorption in the case of III‐V compounds are determined theoretically taking into account the piezoelectric scattering potential associated with dislocations and the eventual existence of a deep flat band. Then the possibility to observe such effects is discussed and these calculations are illustrated by experimental results obtained on InSb.