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Neutral Bound Excitons in a Low Magnetic Field
Author(s) -
Dujardin F.,
Stébé B.,
Munschy G.
Publication year - 1984
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221260139
Subject(s) - exciton , diamagnetism , acceptor , isotropy , condensed matter physics , semiconductor , wave function , magnetic field , impurity , biexciton , chemistry , bound state , atomic physics , materials science , physics , optics , optoelectronics , quantum mechanics , organic chemistry
The diamagnetic shift of an exciton bound to a neutral donor or acceptor shallow impurity in direct gap semiconductors is studied using the previously obtained Page and Fraser type wave function. The results are compared with the experimental observations in InP for the exciton‐neutral donor complex and in GaAs and ZnTe for the exciton‐neutral acceptor complex. In all cases qualitative agreement is found while for InP a very good agreement is obtained if an isotropic experimental effective hole mass is used.