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Green's Function Method in the Equivalent Orbital Basis. Point Defects and Complexes of Two Point Defects in Silicon
Author(s) -
Sh. Makhmudov A.,
Khakimov Z. M.,
Levin A. A.,
Yunusov M. S.,
Khabibullaev P. K.
Publication year - 1984
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221260137
Subject(s) - silicon , vacancy defect , crystallographic defect , atomic orbital , diamond , semiconductor , point (geometry) , impurity , linear combination of atomic orbitals , materials science , molecular physics , function (biology) , atomic physics , condensed matter physics , computational chemistry , chemistry , crystallography , physics , geometry , quantum mechanics , optoelectronics , mathematics , electron , metallurgy , evolutionary biology , biology
A version of the Green's function method on the basis of equivalent orbitals (EO) for the calculation of localized states in diamond‐like semiconductors is described. The band structure of silicon is obtained in terms of the tight‐binding method including a bond interaction through the fourth‐next neighbours. The electronic states of point defects in silicon (vacancy, phosphorus, and sulphur impurities) and of their complexes (divacancy, phosphorus + vacancy) are calculated.