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The Width of the Energy Gap of Tl 3 I B v C 4 VI ‐Type Compounds
Author(s) -
Čermák K.
Publication year - 1984
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221260132
Subject(s) - electronegativity , valence (chemistry) , cationic polymerization , chemistry , semiconductor , band gap , crystallography , bond energy , computational chemistry , materials science , molecule , organic chemistry , optoelectronics
The Tl 3 BC 4 (B V, Nb, Ta; C S, Se) compounds satisfy the 8 N valence rule of Mooser and Pearson and belong to semiconductors. An increase in the value of energy gap E g with the substitution of V by Nb or Ta in these compounds can be ascribed to the increasing bond ionicity due to the increasing difference of electronegativity of the anionic and cationic part of the compounds.