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Study of Bonding Configurations in Amorphous Ge x Si 1− x :H Alloys
Author(s) -
Sala D. Della,
Giovannella C.,
Evangelisti F.
Publication year - 1984
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221260116
Subject(s) - amorphous solid , materials science , substrate (aquarium) , germanium , crystallography , chemical bond , germanium compounds , spectral line , silicon , range (aeronautics) , chemical composition , analytical chemistry (journal) , chemistry , metallurgy , physics , chromatography , organic chemistry , oceanography , astronomy , composite material , geology
The structure of a‐Ge x Si 1− x :H alloys produced at two different substrate temperatures by glowdischarge is investigated over the whole range of the gas composition. By comparing IR spectra and chemical analysis, an overall sticking rate three times larger for Ge than for Si is found, an occurrence which has important consequences on the tailoring of the optical gap E g . The use of a quasi‐statistical model accounts for the intensity of the stretching bands of several hydrides present in the structure and permits to differentiate among hydrides differing only in the second neighbor atoms.