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On Laser‐Induced Lattice Heating in a Polar Semiconductor
Author(s) -
Vasconcellos A. R.,
Luzzi R.
Publication year - 1984
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221260107
Subject(s) - semiconductor , laser , polar , lattice (music) , materials science , nonlinear system , semiconductor laser theory , condensed matter physics , optoelectronics , optics , physics , quantum mechanics , acoustics
Nonlinear transport phenomena and relaxation processes in highly photoexcited polar direct‐gap semiconductors are considered. The rates of energy transfer between subsystems are calculated and it is shown that for ultra‐short laser pulses lattice heating is unimportant. However, for cw laser‐light illumination a pronounced enhancement of the lattice temperature is expected when laser power approaches, or surpasses, a critical value, leading the system to melting conditions.