Premium
Born‐von Karman Cell Model for Deep Impurities
Author(s) -
Biernacki S. W.
Publication year - 1984
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221250243
Subject(s) - brillouin zone , impurity , symmetry (geometry) , atomic orbital , physics , semiconductor , representation (politics) , condensed matter physics , atomic physics , quantum mechanics , electron , mathematics , geometry , politics , political science , law
The Born‐von Karman cell method of calculating the energy levels of deep, transition metal centres in semiconductors based on the linear combination of atomic orbitals representation is presented. The method can be used to calculate the energy separation Δ between impurity levels and to determine their positions with respect to some high‐symmetry points in the Brillouin zone.